ROHM has entered a strategic partnership with Taiwan Semiconductor Manufacturing Company (TSMC) to develop and mass-produce gallium nitride (GaN) power devices for the electric vehicle (EV) market.
The collaboration combines ROHM’s device development expertise and TSMC’s advanced GaN-on-silicon process technology.
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This partnership aims to meet the growing demand for high-voltage, high-frequency power devices, offering advantages over traditional silicon-based solutions.
GaN power devices, which are already utilised in consumer and industrial sectors like AC adapters and power supplies, are expected to play a crucial role in EV technology, especially for onboard chargers and inverters.
TSMC’s expertise in green manufacturing complements the environmental benefits of GaN technology, positioning it well for the automotive sector’s focus on sustainability.
The partnership builds on a history of collaboration between ROHM and TSMC, which includes the 2023 adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series.
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By GlobalDataROHM senior managing executive officer and member of the board Katsumi Azuma said: “GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonised society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology,
“In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximise GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
TSMC senior director of specialty technology business development Chien-Hsin Lee said: “As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,
“By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”
